Power Electronics / Power Management

Common-drain MOSFETs

23 April 2014 Power Electronics / Power Management

Alpha and Omega Semiconductor has released a new dual MOSFET family in the common-drain configuration in both DFN 5 x 6 mm and Micro-DFN 3,2 x 2 mm packages. These devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe charging and discharging as well as voltage protection.

The AON6810, AON6812 and AOC4810 provide source-to-source resistance (RSS) of less than 10 mΩ at 10 V gate drive. They provide ideal solutions for enhancing battery pack performance in the latest mobile devices, where low conduction loss is a must for optimising battery life.

The new devices use the latest AlphaMOS technology to accomplish very low RDS(ON) along with 4 kV ESD protection to enhance battery pack safety. The AON6810 and AON6812 use a bottom-exposed DFN 5 x 6 package for enhanced thermal capability.

The AON6812 features a low 8 mΩ maximum total RSS at 10 V drive. Rated with a 30 V breakdown voltage, it is capable of charging and discharging a laptop battery pack with very little power loss and heat dissipation.

The AON6810 provides an extra level of protection with an internal temperature sense diode that provides first-hand thermal information to the battery control IC. By utilising the temperature sense pins of the IC, designers can accurately monitor the MOSFETs’ thermal condition in real time to prevent any abnormal overheating.

To meet the demand of ultra-thin battery packs, the AOC4810 takes advantage of a Micro-DFN package which features an ultra-low profile of only 0,4 mm. With dimensions of only 3,2 x 2 mm, this device offers a maximum RSS level of 8.8 mΩ to minimise conduction loss and heat dissipation.


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