Alliance Memory introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb and 4 Gb in 78-ball, 9 x 10,5 x 1,2 mm and 96-ball, 9 x 13 x 1,2 mm FBGA packages. With their double data rate architecture, they offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.
With minimal die shrinks, the company’s DDR3 (1,5 V) and DDR3L (1,35 V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, consumer and telecom applications, eliminating the need for costly redesigns and part requalification.
The AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3 and AS4C512M8D3 operate from a single +1,5 V power supply, while the AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L and AS4C512M8D3L operate from a single +1,35 V power supply. The devices are offered with a commercial temperature range of 0°C to +95°C and an industrial temperature range of -40°C to +95°C.
The chips are internally configured as eight banks of 64M, 128M, 256M and 512M x 8 bits and/or 16 bits. They offer fully synchronous operation and provide programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence.
Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance.
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