DSP, Micros & Memory


High-speed DDR SDRAMs

29 October 2014 DSP, Micros & Memory

Alliance Memory introduced a new line of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1,7 V to 1,95 V and a number of power saving features, the 256 Mb, 512 Mb, 1 Gb and 2 Gb devices (AS4C16M16MD1, AS4C32M16MD1, AS4C16M32MD1, AS4C64M16MD1, AS4C32M32MD1 and AS4C64M32MD1) feature auto temperature compensated self-refresh and partial array self-refresh to reduce power consumption, while a deep power-down mode provides an ultra-low power state when data retention is not required. The SDRAMs offer high-speed operation with clock rates of 166 MHz and 200 MHz.



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