High-density NOR Flash integrated into combination memory devices
27 August 2003
DSP, Micros & Memory
SST (Silicon Storage Technology) has introduced seven new products in its second-generation 32 series ComboMemory product family. These additions blend up to 64 Mbits of SST's 0,18-micron self-aligned, second-generation SuperFlash technology with up to 32 Mbits of low-power, pseudo-static random-access memory (PSRAM). This results in a unique solution that the company says offers designers cost, space and power savings as well as improved system performance and simplified system design over discrete Flash and SRAM devices.
The new family uses the company's recently announced, high-performance, high-density multipurpose Flash Plus (MPF+) family as well as its new generation Flash technology. These products represent highly-integrated solutions designed specifically to meet the power and performance requirements of low- to mid-range cellular phones, wireless modems, PDAs and other mobile communication devices.
SST's ComboMemory products incorporate the company's SoftPartition Flash memory architecture, allowing designers to seamlessly partition the data and program code into granular 2 KWord sectors and enabling them to balance the amount of memory used for code and data storage depending on the application. In addition, ComboMemory allows concurrent memory operations, a feature that maximises system throughput. As a result, the devices are able to simultaneously read from or write to the SRAM bank while erasing or programming in the Flash memory bank. The SRAM memory bank can be read or written while the Flash memory bank performs sector erase, bank erase or word program concurrently.
The new ComboMemory family is offered in a very small (8 x 10 mm) multichip package (MCP), representing a 19% shrink in package size from previous devices. Packages are 63-ball TFBGA (8 x 10 x 1,2 mm), 62-ball LFBGA (8 x 10 x 1,4 mm), and 63-ball LFBGA (8 x 10 x 1,4 mm).
For more information contact Memec SA, 011 897 8600.
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