Analogue, Mixed Signal, LSI


SiGe RF transistors for wireless applications

10 March 2004 Analogue, Mixed Signal, LSI

Infineon has designed its latest generation of Silicon-Germanium (SiGe) technology to provide optimum RF performance with a very low noise ratio. SiGe RF transistors are designed for highest-frequency wireless applications, eg, very low noise, high gain amplifiers, 2,4 and 5 GHz WLAN (BFP640), medium/high-power amplifiers (BFP650, 690), preamps in base stations, and dielectric resonant oscillators (DRO) in low noise blocks (LNB).



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