The RF2371 and the RF2375 are two new silicon-based low noise amplifiers from RF Microdevices, designed for general-purpose amplification. With a range of 700-2000 MHz they offer high performance, low power consumption and compact design.
At 1950 MHz, the first device delivers 12 dB gain and a 1,8 dB noise figure. The component's attenuation is controlled when in power-down mode, providing a known gain step of 17 dB. It also features a highly accurate PTAT (proportional to absolute temperature) biasing scheme using bandgap cells.
The RF2375 features an operating range of 700-2000 MHz, and is an ideal LNA for DCS 1800/1900 handsets. At 1950 MHz, the device offers 18 dB gain and a 2,5 dB noise figure. To maximise the receiver design's dynamic range, the input IP3 (-5 dBm at 5,3 mA) can be set with an external resistor. This component also features attenuation control when in power-down mode, providing a known gain step of 25 dB. PTAT bias currents are used to bias the LNA.
The amplifier devices operate from a single 2,7-3,6 V power supply and come in small SOT-23-8 surface mount package. Applications for both LNAs - in addition to cellular - include general-purpose amplification, use as a driver stage for power amps, IF or RF buffer amplification and oscillator loop amplification.
For more information contact Clinton Hennessey, RF Design, 021 763 4700, sales@rfdesign.co.za
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