Infineon Technologies has developed the next generation of its Goldmos LDMOS (laterally diffused metal-oxide semiconductor) die technology for high-performance, high-power RF transistors. In addition to superior linear efficiency, ultra-wide-bandwidth performance and reduced memory effect, Infineon says the new transistors provide the industry's best thermal performance. They are intended to be integrated into products designed for use in UMTS/WCDMA, GSM, CDMA, EDGE, TDSCDMA, PCS/DCS, MMDS, TV broadcast and DAB amplifiers. Gold metallisation has superior reliability at high temperatures. One of the first products is the single-ended, 2,1 GHz, 100 W PTFA211001E device. In 2-carrier WCDMA 3GPP mode, this device has an average output of 22 W and 16,5 dB gain with 30% efficiency. It has an ultra-wide-bandwidth of several hundred MHz, IM3 of -37 dBc and a thermal resistance of only 0,38°C/W. The company says that compared to its previous-generation Goldmos, the new range has a 30% increase in power density and higher terminal impedance.
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