Rohm has expanded its family of surface mount power MOSFETs with a range of ultra-miniature devices that have on-resistance ratings as low as 35 mΩ and that handle currents up to 3,5 A.
Intended for power management applications in portable equipment, the devices are supplied in Rohm's new 3-pin, 5-pin and 6-pin high-power, ultra-miniature TUMT packaging. These packages have footprints of 2,0 x 1,7 mm. According to the company, a board mounting profile of 0,85 mm is 25% lower than previous UMT (SOT323/363) style devices, while power dissipation ratings of 500 mW represent a 150% increase over UMT alternatives.
The new power MOSFETs are available in n-channel and p-channel versions and in single- and dual-MOSFET formats that incorporate two n-channel or two p-channel configurations. Rohm also offers dual-channel variants that combine n- and p-channel MOSFETs in a single device. Some of the devices are also available with a built-in Schottky Barrier Diode for simplified design of DC/DC converters.
Driving voltages are rated at either 2,5 V or 4,0 V, depending on the specific device chosen. On resistance (RDS(ON)) ratings (at 4,5 V) range from 35 mΩ to 280 mΩ, and current handling capabilities range from 0,5 A to 3,5 A.
The TUMT power MOSFETs are fully compatible with modern automated manufacturing equipment, and use a flat lead construction for accurate self-alignment during assembly.
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