Microchip Technology recently announced the availability of its new 3,3 kV HV‑D3 mSiC Power Modules, designed to simplify and accelerate the adoption of solid-state transformers (SSTs) in AI hyperscale data centres and other high‑voltage power applications. The new modules integrate 3,3 kV silicon carbide mSiC MOSFETs and Schottky diodes in an industry‑standard 62 mm package, enabling efficient power delivery from the medium‑voltage grid directly to the server rack.
The modules offer highly competitive RDSON stability over temperature, with packaging that supports 6 kV isolation, incorporates CTI 600‑rated materials and features extended creepage distances, designed to allow safe series connection for high‑voltage operation. A silicon nitride substrate delivers enhanced thermal conductivity and power‑cycling capability, helping designers achieve higher power density with less aggressive cooling.
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