RF Micro Devices has released two new gallium arsenide heterojunction bipolar transistor (GaAs HBT) pre-driver power amplifiers. The ¼ W RF3807 and 2 W RF3809 single-stage devices operate across CDMA, GSM, DCS, PCS and UMTS frequencies. The RF3807 and RF3809 feature high linearity (>+42 dBm, UMTS), high power-added efficiency (>40%, P1dB) and broadband (450-2200 MHz) performance, providing functionality for a variety of wireless applications. Operating in the UMTS frequency band, the RF3807 provides +28,5 dBm output power (OP1dB), high power efficiency (40% at OP1dB), high linearity (+42 dBm OIP3) and gain (14,5 dB) under linear operation. The RF3809 driver amplifier provides +33,5 dBm output power (OP1dB), high power efficiency (43% at OP1dB), high linearity (+43 dBm OIP3) and gain (10,5 dB) under linear operation, also in the UMTS band.
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