In the last five years, the demand for power semiconductors for automotive applications has increased significantly. In many cases, discrete devices are the common choice to regulate and control the electric energy.
However, higher power applications, such as 'drive by wire', AC-inverters for starter-generator or fan control, active suspension, power steering, and active valve control, demand higher rated and very reliable power systems, which are difficult to build by just paralleling discrete components.
Limiting factors for those power systems are the large die-sizes and mismatch of temperature expansion coefficients between silicon and Cu-lead frames. Usually high ambient temperatures (up to 120°C) are existent, leaving little room for cooling the power system. In addition, those power applications require high packaging density and compactness, low power dissipation of the power semiconductor itself and good heat transfer characteristics, as well as low system cost.
To cope with these requirements, Ixys offers a wide range of products based on its own proprietary Isoplus-packaging technology. The base for those compact power components is either a DCB or DAB (direct copper or alumina bonded) ceramic substrate, patterned to hold up to 20 Trench-MOSFETs or combinations of Trench-MOSFETs and Schottky diodes for boost or buck applications.
The new DAB-substrate shows an even higher reliability when repetitive temperature cycles are applied. The Ixys FMM 200-0075P is a 75 V phase-leg Trench-MOSFET in an Isoplus-i4-PAC with 3,5 mΩ per switch.
The latest advance in package development is the new Isoplus-DIL-package, which incorporates six Trench-MOSFETs in an AC-inverter configuration in a DCB-isolated, dual-in-line package. Each Trench-MOSFET switch in a GWM160-0055P3 has an RDS(on)</FONT> of just 3 mΩ and a BVDSS</FONT> of 55 V. The rated drain current at 25°C is 160 A per switch. The 3-phase output terminals are designed to handle up to 300 A rms while the temperature range is specified from -40 to 175°C. The outer housing dimensions are 5 x 25 x 37,5 mm.
For even higher power applications, such as battery circuit breakers, SSR, AC-drives, etc, a 1500 A/75 V, phase-leg, Trench-MOSFET module was developed. The VMM1500-0075P is housed in a 30 x 62 x 110 mm wide module. Each switch has a RDS(on)</FONT> of 0,55 mΩ.
Ixys also produces a wide range of gate driver ICs, such as the IXBD4410/11 and IX6R11 for phase-leg applications and the IXDD402-430 series for low side gating. Output peak currents of up to 30 A are possible.
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