Fairchild Semiconductor says its SyncFET is the industry's first integrated Schottky and MOSFET in a single die. The manufacturer says that integrating a titanium Schottky barrier diode with a vertical DMOS PowerTrench MOSFET in a monolithic die provides a dramatic performance improvement and cost savings over discrete or co-packaged solutions.
SyncFET enjoys a significant advantage over single-package, multidie Schottky combos, claims Fairchild. In multidie combos, the Schottky die area, extra wirebonds, and package overhead required to accommodate multiple dice consume internal package real estate. Integrating the Schottky directly into the silicon allows the entire package area to be used for the MOSFET, resulting in a performance improvement of nearly 50% over the typical multidie combo solution. Integration also reduces the EMI/RFI since high-frequency currents do not have to flow through bond wires and PCB traces between an external Schottky and the MOSFET, it says.
The FDS6982S combines a 12 mW low side SyncFET and a 21 mW, low gate charge high-side MOSFET in a single SO-8 package, providing a single package power solution for DC-DC converter designs up to 7 A. The FDS6680S is an 8,5 mW PowerTrench SyncFET in an SO-8 package.
The SyncFET allows the Schottky area to be scaled to the size required to prevent the MOSFET body diode from turning-on. This allows Fairchild to match the performance of the Schottky to the requirements of the MOSFET.
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