Infineon Technologies has released new silicon-germanium carbon (SiGe:C) technology-based RF transistors that have extremely low noise figures. Intended for various wireless applications, the company says the new BFP740 HBT family achieves silicon-based performance levels that could previously be attained only by using more expensive technologies based on gallium arsenide (GaAs).The SiGe:C process technology is the foundation of the company's latest generation of heterojunction bipolar transistors. It claims this provides the world's lowest noise figures for silicon-based discrete transistors. They have a typical transition frequency of 42 GHz and low noise figure levels: 0,5 dB at 1,8 GHz and 0,75 dB at 6 GHz, respectively. With a typical Gms (maximum stable power gain) of 28 dB at 1,8 GHz, typical Gma (maximum available power gain) of 19 dB at 6 GHz and low current operation, these devices are ideal for a wide range of RF and wireless applications above 10 GHz.
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