Ramtron is offering its FM24C256 256 Kb two-wire interface ferroelectric random access memory (FRAM). FRAM operates like random access memories, while also supplying nonvolatile storage. With its superior write performance and 256 Kb memory capacity, the FM24C256 offers a cost-effective replacement for battery-backed SRAMs. Typical applications need significant data storage capacity, such as utility metering and realtime configuration storage.
"The FM24C256 is the first step in Ramtron's strategy of design reuse," said Michael Alwais, Director of Marketing for Ramtron. "We were asked by an important customer to develop the 256 Kb serial product for a volume opportunity in our core electric meter segment. Ramtron delivered customer samples four months after starting the design in order to win the program."
Like other FRAM products, the FM24C256 offers fast write-operations and very high write-endurance. It offers improved functionality to EEPROM users, eliminates the back-up battery and saves system costs in SRAM applications. For ease of development, the FM24C256 is protocol compatible with industry standard two-wire EEPROMs. The product fills out Ramtron's portfolio of serial memories, extending from 4 to 256 Kb with all major densities in between.
Technology
Ramtron's ferroelectric technology has ideal attributes for a nonvolatile memory. These include its fast write-time and high write-endurance. Its low-power operation, which needs no charge pump or other circuit overhead, is also beneficial. The FM24C256 is a 256 Kb nonvolatile RAM operating through an industry standard two-wire interface. It operates at a maximum clock speed of 1 MHz, and write-operations have NoDelay. The product offers over 10 years of data retention; 10 billion (1E10) write cycles; and operates over an industrial temperature range of -40 to +85°C. The FM24C256 is available in 20-pin SOP package.
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