MOSFETs with built-in temperature sensing protect automotive electrical systems
22 November 2000
Power Electronics / Power Management
International Rectifier is offering its first TempSENSE HEXFET power MOSFET, which can provide cost-effective temperature sensing for automotive system protection by using an on-chip temperature sensing diode. The device provides a simple and cost-effective alternative to more complex and expensive intelligent solutions, claims IR.
The IRLBD59N04E is a 40 V, 20 mOhm, N-channel MOSFET. Temperature sensing is provided by two anti-parallel electrically isolated poly-silicon diodes. The diode's forward voltage falls to approximately 0,5 V with a bias current of 250 mA when the MOSFET reaches its maximum permitted temperature value. The voltage feedback can be used with a monitoring circuit to turn the MOSFET off, protecting the application circuit from current overload and excessive temperature. Additionally, back-to-back zener diodes protect the IRLBD59N04E gate-to-source path from electrostatic discharge up to 2000 V.
According to the manufacturer the device provides cost-effective temperature sensing for automotive system protection. It adds that the logic-level device can be configured to work with existing microcontrollers with minimum circuit re-design. This provides a simple and cost-effective alternative to more complex and expensive intelligent power switches.
The device will meet the rigid Q101 automotive stress test qualification procedure at 175°C. The Q101 certification process is designed to ensure high reliability component performance in harsh automotive environments. The IRLBD59N04E is therefore well suited for anti-lock brakes (ABS) and fuel injection systems, as well as power door locks, window lifts and car audio circuits.
The device is rated: Rds(on) is 18 mOhm at 10 V and 20 mOhm at 5 V; current at 25°C is 59 A and B V(dss) is 59 V.
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