Hybrid emitter-switched transistor reduces power dissipation

31 May 2006 Power Electronics / Power Management

STMicroelectronics hybrid emitter-switched bipolar transistor (ESBT) is designed for use in welding equipment, induction heating systems and power factor correction for audio amplifiers. The STE50DE100 sustains a high collector-source voltage of 1000 V and collector currents of up to 50 A. The four-terminal device is supplied in an industrial screw-mounted Isotop package.

ST has designed this part to combine the strengths and eliminate the drawbacks of both bipolar and mosfet technologies.

Power bipolar technology to date has typically been used in power switching applications at frequencies well below 70 kHz. Its low collector-emitter saturation voltage brings the benefit of low conduction losses. Drawbacks however, include slow switching speeds, the need for high currents from driving circuitry and problems related to fine-tuning this circuitry.

In contrast, mosfet technology is widely used in high-frequency power switching applications. Mosfets' main benefits are high switching speed capability and the need for very low current from its driving circuitry. Drawbacks include higher cost compared to bipolar, and high power consumption during conduction.

By combining the benefits and removing the drawbacks of both technologies, ST says that the STE50DE100 helps reduce the conduction losses to the same level as those of a bipolar part, while offering good performance in high-speed switching at up to 150 kHz as for mosfets.

In addition, thanks to its cascode configuration and dedicated bipolar technology, the device offers a square reverse bias safe operating area, enabling it to work in hard switching topologies.v The rugged isotop allows a very high total power dissipation of 160 W at 25°C. Maximum operating junction temperature is 150°C and the insulation withstand voltage is 2500 V a.c. rms.

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