Power Electronics / Power Management


Power modules with new chip technology have less stray inductance and extended operating temperature

9 August 2006 Power Electronics / Power Management

At the PCIM 2006 exhibition and congress in Nuremberg, Infineon Technologies introduced a new family of compact IGBT (insulated gate bipolar transistor) modules intended for power converter system solutions.

The new PrimePACK modules are based on an innovative packaging concept that also utilises the advantages of Infineon's new generation IGBT4 chips.

According to the company, the innovative module design - in which, for example, the IGBT chips are closer to the baseplate's screw-fastening points resulting in a low thermal resistance between baseplate and heatsink - offers such features as the ability to reduce internal stray inductance by approximately 60% from that of comparable modules. Reduced stray inductance is important to avoid over-voltage spikes. The special layout significantly improves heat distribution, resulting in a low thermal resistance of the whole system. With +150°C, the maximum operating temperature is considerably higher than the +125°C achieved with previous modules, it claims.

The new IGBT modules for power converter applications can boost nominal current by approximately 20% without changing the blocking voltage or the module size, or can offer the same total power loss in a comparatively smaller module, says Infineon. The modules are optimised for various industrial drives, as well as for windmills, elevators or auxiliary drives, power supplies and heating systems in trains and tractives.

Offered in both 1200 V and 1700 V voltage classes, the PrimePACK modules are available in two module sizes; the 89 x 172 mm PrimePACK2 and the 89 x 250 mm PrimePACK3. The half-bridge configuration and modular design of the PrimePACK modules make it easy to scale the power of converters by employing different module sizes, or by connecting the modules of a given type in parallel.



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