BJTs have improved power efficiency for portable applications

29 November 2006 Analogue, Mixed Signal, LSI

ON Semiconductor has expanded its low Vce(sat) bipolar junction transistors (BJTs) portfolio to include WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages. According to the company, these new devices offered in multiple package options, incorporate advanced silicon technology and provide better power efficiency and longer battery life than traditional BJTs or planar MOSFETS. These low Vce(sat) surface mount devices are ideal for a variety of portable applications. They are specifically designed for use in low voltage, high-speed switching applications where energy efficiency control is vital. They feature ultra-low saturation voltage (45 mV at 1 A) and high current gain. They offer a high ESD tolerance of >8000 V. The SOT-23 is one of the industry's most popular packages and offers the lowest cost. The SOT-563 is the smallest of the new package offerings at 1,6 x 1,6 x 1,0 mm. The two WDFN packages are 2,0 x 2,0 mm with a low 0,7 mm package height - this package is the most thermally efficient. The ChipFET at 3,0 x 2,0 x 1,0 mm provides the best overall performance according to ON Semiconductor.

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