RF Micro Devices has announced the release of the CXE-1089Z GaAs pHEMT LNA (low-noise amplifier) for use in cable set-top box and digital television (DTV) applications. The device is optimised for both low noise figure and low current consumption in order to best satisfy the increasing performance requirements of next-generation, higher-bandwidth devices.
The CXE-1089Z features patented active bias circuitry, which stabilises bias current across changes in threshold voltage related to temperature and process variation, thereby reducing current consumption. It also utilises a Darlington configuration with an optional external bias control, which further reduces current consumption - and lowers the thermal profile of the end product - while maintaining linear RF performance optimised for each application.
The LNA operates from a single 5 V supply, and boasts a noise figure of 2,8 dB, with CTB of -79 dBc and CSO of -66 dBc at 110 channels, +15 dBmV/channel at the input. Gain response is 13 dB ±0,4 dB over 50 to 1000 MHz and input return loss is greater than 18 dB.
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