Rugged power MOSFETs
23 July 2008
Power Electronics / Power Management
New from Ixys is the TrenchT2 Power MOSFET family with voltage ratings of 40 V to 75 V, designed and optimised to meet the high power, thermal and electrical performance of energy and power management systems with low energy losses. These rugged devices demonstrate typical on-state resistances less than 5 mΩ. These MOSFETs provide for very low conduction and switching losses, which are crucial factors to achieve higher operating efficiencies. They are also rugged in unclamped inductive switching applications and are packaged in low-inductance housings to improve high frequency switching. TrenchT2 MOSFETs provide designers with high current rating solutions for improved efficiency in automotive electronics, electrical vehicles and power management systems. Common applications include battery chargers, synchronous rectification, DC-DC converters, power train management, off-line SMPS and UPS, primary switches for 24 V and 48 V systems, distributed power architecture, power amplifiers and brushless motor control.
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