Power Electronics / Power Management


45 V Schottky diodes

6 August 2008 Power Electronics / Power Management

Vishay has launched two new high-performance 45 V Schottky diodes which offer maximum junction temperature to +175°C. Built on sub-micron trench technology, the 30CTT045 and 60CPT045 offer extremely low forward voltage drop and low reverse leakage, allowing designers to increase power density in automotive and other high-temperature applications.

The two Schottky diodes feature very low maximum forward voltage drops at +125°C of less than 0,50 V at 30 A for the two x 30 A 60CPT045, and less than 0,50 V at 15 A for the two x 15 A 30CTT045. Reverse leakage at +125°C is a low 5 mA and 2 mA for these respective devices, with tight parameter distribution. Both devices offer optimised VF versus IR trade-off for increased system efficiency.

The diodes are optimised for AC-DC secondary rectification, flyback, buck and boost converters, half-bridge, reverse battery protection, freewheeling, class-D amplifiers, and DC-DC module applications. Typical end products include high power-density SMPS; adaptors for desktop PCs; servers; automotive drives and controls; consumer electronics like PDPs, LCDs and high-efficiency audio systems; and mobile electronics such as notebook computers, cellphones and portable media players.

For designers, the new devices are offered in small RoHS-compliant packages for improved cost-to-power ratios, with RBSOA available for tight and cost-effective designs. The 30CTT045 is offered in the TO-220 package, while the 60CPT045 is offered in the TO-247.

A high and stable breakdown voltage (greater than 57 V) accommodates voltage spikes and optimises power density. The devices feature 40% increased ruggedness for reverse avalanche capability, with parts 100% screened in avalanche, and negligible switching losses.

For more information contact EBV Electrolink, +27 (0)21 402 1940, [email protected], www.ebv.com



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