Freescale has introduced a 50 Volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver very high output power. The latest addition to Freescale’s growing family of RF power LDMOS transistors for broadcast applications, the transistor is designed for TV transmitters employing both analog and digital modulation formats.
The MRF6VP3450H delivers more than 450 W peak power at P1dB with 50% efficiency throughout the UHF broadcast frequency band. Using a DVB-T 64 QAM OFDM signal at 90 W average output power, the typical 860 MHz 50 V performance is 28% drain efficiency and 23 dB gain, with an adjacent channel power ratio (ACPR) at 4 MHz offset of -62 dBc in a 4 kHz bandwidth.
The MRF6VP3450H is rugged and is designed to handle very high impedance mismatches without damage. For example, operating at 50 V and 90 W average DVB-T OFDM, it can survive all phase angles of a 10:1 VSWR. Similarly, it will survive the same mismatch operating at 450 W peak pulsed power (10 μs pulse, 2,5% duty cycle). The device also incorporates protection against electrostatic discharge (ESD), which makes it less susceptible to damage during handling and manufacturing.
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The ST67W611M1 from STMicroelectronics boasts an all-in-one design which, together with its capabilities, contribute to making it an attractive choice for IoT edge devices requiring a single-chip solution.
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The Thyone I radio module from Würth Elektronik now has a little sibling: Thyone-e, which takes up 30% less space and represents a cost-effective alternative for applications in which the long-range mode is not required.
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Telecoms, Datacoms, Wireless, IoT
Silicon Labs’ SiWx917M SoC is the company’s lowest power Wi-Fi 6 SoC, ideal for ultra-low power IoT wireless devices using Wi-Fi, Bluetooth, Matter, and IP networking for secure cloud connectivity.
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Analogue, Mixed Signal, LSI
The VIA series of isolation amplifiers from Vishay are designed to deliver exceptional thermal stability and precise measurement capabilities.
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