Alliance Memory has added 8 M density and x16 configuration to its low-power SRAM product line-up.
The x16 configuration enables faster data access by allowing the device to send output data during the read cycle and receive input data during the write cycles. The SRAM typically operates at 55 ns and with the x16 design, power consumption is further reduced.
With the inclusion of the x16 configured devices, Alliance now offers a comprehensive asynchronous SRAM portfolio with fast and low-power SRAM in both 3,3 V and 5 V, ranging from 64 K through to 8 M.
Target applications include industrial, medical, consumer and mobile devices where power consumption is a primary concern.
Alliance’s DRAM products offer drop-in replacement parts that are pin-for-pin compatible, thus eliminating the need for costly re-designs. All parts are RoHS compliant and the x16 parts are available in 1 M, 2 M, 4 M and 8 M densities in both the 44-pin TSOPII and 48-ball TFBGA packages.
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