Ixys has expanded the capabilities of its GenX3 family of insulated gate bipolar transistors (IGBTs) to 600 V. This makes them particularly suited to applications such as power factor correction circuits, uninterruptible power supply systems, switch-mode power supplies, induction, DC and BLDC motor drives, high frequency inverters, solar power inverters and battery chargers.
The new devices are offered in three sub-classes denoted A3, B3, and C3. These classifications allow designers to choose the best compromise between static (conduction) and dynamic (switching) losses, improving over-all system efficiency and balancing critical requirements such as switching frequency, efficiency and cost structure. These devices incorporate Ixys’ proven Punch-Through (PT) technology providing high surge current capabilities, low saturation voltage and low switching losses.
These new IGBTs are packaged with Ixys’ high-performance HiPerFRED and SONIC ultra-fast diodes offering excellent fast recovery due to low reverse recovery charge (Qrr). The square reverse bias safe operating area featured in the 600 V IGBT allows the device to safely operate in snubberless hard switching applications. These devices are also available in Ixys’ ISOPLUS packaging providing isolation capability up to 2500 V and enhanced thermal performance.
Products are offered in various standard packages, including the full spectrum of surface mount and discrete packages (TO-263 to TO-268, TO-220 to SOT-227) with collector current ratings from 36 A to 210 A.
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