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Power MOSFETs with low on-resistance
4 March 2009, Power Electronics / Power Management

Vishay has expanded its family of Gen III TrenchFET power MOSFETs with the release of a new 25 V n-channel device offering very low on-resistance and on-resistance times gate charge in the PowerPAK SO-8 package type.

The SiR476DP features a maximum on-resistance of 2,1 mW at a 4,5 V gate drive and 1,7 mW at a 10 V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89,25 nC at 4,5 V.

The device is targeted for use as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.

Vishay has also released the new 25 V SiR892DP and SiR850DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4,5 V of 4,2 mW and 9 mW, on-resistance at 10 V of 3,2 mW and 7 mW, with typical gate charges of 20 nC and 8,4 nC.

All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are lead-free, halogen-free, and RoHS-compliant.

For more information contact EBV Electrolink, +27 (0)21 402 1940, capetown@ebv.com, www.ebv.com


Credit(s)
Supplied By: EBV Electrolink
Tel: +27 21 402 1940
Fax: +27 21 419 6256
Email: saro.murabito@ebv.com
www: www.ebv.com
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