Vishay has developed a 190 V n-channel power MOSFET plus co-packaged 190 V power diode with a compact 2 x 2 mm footprint and an ultra-thin 0,75 mm profile. Offered in the PowerPAK SC-70 package, typical applications for the SiA850DJ include boost DC-DC converters for high-voltage piezo-electric motors and organic LED (OLED) backlighting. Integrating the MOSFET and the power diode into the same package saves designers PCB area, while also lowering solution cost by eliminating the need for an external diode. While larger devices feature on-resistance ratings down to 2,5 V, the SiA850DJ is rated down to 1,8 V, which further saves board space by reducing the need for level shift circuitry. The device offers low on-resistance values from 17 Ω at 1,8 V VGS to 3,8 Ω at 4,5 V VGS, and a diode forward voltage of 1,2 V at 0,5 A.
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