Vishay has released new 20 V and 30 V p-channel TrenchFET power MOSFETs with a ±20 V gate-source voltage and very low on-resistance.
Packaged in the SO-8 footprint, the Si7633DP offers on-resistance of 3,3 m at 10 V and 5,5 m at 4,5 V. The 30 V Si7135DP offers an on-resistance of 3,9 m at 10 V and 6,2 m at 4,5 V. Packaged in the PowerPAK SO-8, both MOSFETs are said to allow for a 60% higher maximum drain current and 75% higher maximum power dissipation than devices in the standard SO-8 package.
The devices are suitable for use as an adaptor switch and for load switching applications. Adaptor switches (switching between the adaptor/wall power and battery power) are always on and drawing current. The lower on-resistance of the Si7135DP and Si7633DP translates into lower power consumption, saving power and prolonging battery life between charges.
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