DSP, Micros & Memory


8 Mb parallel nonvolatile F-RAM

22 July 2009 DSP, Micros & Memory

Ramtron has made available its 8 Megabit F-RAM memory in a streamlined FBGA package.

The FM23MLD16 is a 3 V, parallel nonvolatile RAM in a 48-pin fine-pitch ball grid array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin compatible with asynchronous static RAM (SRAM), the device targets industrial control systems such as robotics, network RAID storage solutions, multifunction printers, auto navigation systems, and a host of other SRAM-based system designs.

The FM23MLD16 is organised as a 512 K x 16 nonvolatile memory, accessed with an industry standard parallel interface. Access time is 60 ns and cycle time is 115 ns. The device reads and writes at bus speed for NoDelay writes with endurance of at least 100 trillion writes and 10 year data retention. It also does not require a battery for data backup.

The IC is a true surface-mount solution, requiring no rework steps for battery attachment and is highly resistant to moisture, shock and vibration, making it well suited to harsh industrial applications. It includes a low-voltage monitor that blocks access to the memory array when supply voltage drops below a critical threshold. The memory is protected against inadvertent access and data corruption under this condition.

With a convenient interface to current high-performance microprocessors, the FM23MLD16 features a high-speed page mode that enables 8 Byte burst read/write operations at up to 33 MHz. The device draws 9 mA for reads/writes and a typical standby current of 180 μA. It operates from 2,7 to 3,6 V over the industrial temperature range of -40°C to +85°C.



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