Vishay has released four new 600 V MOSFETs that extend its Super Junction FET technology to the TO-220, TO-220F, TO-247 and TO-263 packages.
The new SiHP22N60S (TO-220), SiHF22N60S (TO-220 FULLPAK), SiHG22N60S (TO-247) and SiHB22N60S (TO-263) combine their 600 V rating with low 0,190 Ω maximum on-resistance at a 10 V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulse width modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, switch mode power supplies (SMPS) and telecom systems.
In addition to their low on-resistance, the devices feature a low gate charge of 98 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 18,62 Ω*nC. For reliable operation, the devices are 100% avalanche tested and feature high repetitive (EAR) avalanche energy capabilities. Peak current handling is 65 A pulsed and 22 A continuous. All four devices feature an effective output capacitance specification.
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