Innovative RF power transistor packaging

14 April 2010 Telecoms, Datacoms, Wireless, IoT

STMicroelectronics has developed innovative plastic air-cavity packages that enable high-power transistors for radio frequency (RF) applications such as transceivers, broadcast equipment and MRI scanners to deliver claimed performance and cost advantages over alternative devices in ceramic packages.

Air-cavity packages provide high electrical isolation for silicon dice, and are well suited for high-frequency, high-power applications. Whereas the traditional package body is typically ceramic to withstand high-temperature soldering during package assembly, this new air-cavity technology enables lower thermal resistance, lower weight and reduced cost compared to devices in ceramic packages.

ST’s new STAC plastic packages achieve junction-to-case thermal resistance (RTH) of 0,28°C/W; this improves heat removal from the die during normal operation, allowing transistors to deliver increased gain and greater output power while simultaneously increasing reliability. Two versions are available, matching the dimensions of industry-standard solder-down (flangeless) or bolt-down ceramic packages to enable direct replacement in existing designs.

ST has introduced three new devices for applications up to 250 MHz using this new package technology, including a 100 V VHF MOSFET. The 100 V STAC3932B/F, in bolt-down or flangeless configurations, has 26 dB linear gain and can sustain pulse-power output up to 900 W. The STAC2932B/F and STAC2942B/F are 50 V devices having linear gain and continuous rated output power of 20 dB/400 W and 21 dB/450 W respectively. The devices achieve nominal efficiency from 68% to 75.

For more information contact Robin Scholes, Avnet Kopp, +27 (0)11 809 6100, [email protected], www.avnet.co.za

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