Power Electronics / Power Management


N-channel power MOSFETs

9 June 2010 Power Electronics / Power Management

ON Semiconductor has broadened its portfolio of N-channel power MOSFET devices with the introduction of new 30 V products with integrated Schottky diodes.

The NTMFS4897NF, NTMFS4898NF and NTMFS4899NF have maximum RDS(on) values of 2 mΩ, 3 mΩ and 5 mΩ respectively at 10 V, optimised for the synchronous side in buck converter applications to achieve high power efficiency. Typical gate charge specifications of 39,6 nC, 25,6 nC and 12,2 nC respectively (at Vgs of 4,5 V) ensure that switching losses are also kept to a minimum.

Typical applications for the new power MOSFETs include DC-DC conversion, point-of-load conversion and low-side switching tasks. The devices are all offered in SO-8FL, 5 x 6 mm, RoHS-compliant package with low thermal resistance.

For more information contact Robin Scholes, Avnet Kopp, +27 (0)11 809 6100, robin.scholes@avnet.co.za, www.avnet.co.za



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