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FET for K-band
18 August 2010, Switches, Relays & Keypads

California Eastern Laboratories has released the new NE3517S03 GaAs Field Effect Transistor (FET) designed for K-band applications. The new FET has been redesigned with a low-cost plastic package which maintains the same performance as the prior generation’s ceramic package.

The new NE3517 is an N-channel GaAs hetero junction FET used primarily as a low noise amplifier (LNA). Its primary application is cost sensitive product designs in the K-Band at 20 GHz, including LNBs for satellite TV receivers. Although designed for low cost, the new FET maintains a noise figure (NF) of 0,7 and associated gain (Ga) of 13,5 at 20 GHz, suitable for applications that use LNAs to extend wireless range. It is available in a Micro-X plastic (S03) package measuring 2,6 x 2,6 x 1,5 mm.

For more information contact Andrew Hutton, RF Design, +27 (0)21 555 8400, sales@rfdesign.co.za, www.rfdesign.co.za


Credit(s)
Supplied By: RF Design
Tel: +27 21 555 8400
Fax: 086 653 2139
Email: sales@rfdesign.co.za
www: www.rfdesign.co.za
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