California Eastern Laboratories has released the new NE3517S03 GaAs Field Effect Transistor (FET) designed for K-band applications. The new FET has been redesigned with a low-cost plastic package which maintains the same performance as the prior generation’s ceramic package.
The new NE3517 is an N-channel GaAs hetero junction FET used primarily as a low noise amplifier (LNA). Its primary application is cost sensitive product designs in the K-Band at 20 GHz, including LNBs for satellite TV receivers. Although designed for low cost, the new FET maintains a noise figure (NF) of 0,7 and associated gain (Ga) of 13,5 at 20 GHz, suitable for applications that use LNAs to extend wireless range. It is available in a Micro-X plastic (S03) package measuring 2,6 x 2,6 x 1,5 mm.
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