ESD protection diode arrays
16 May 2012
Circuit & System Protection
Comchip Technology has developed a 3,3 V unidirectional 4-line electrostatic discharge (ESD) protection diode array that meets the immunity requirements of IEC 61000-4-2 level 4 (±20 kV air, ±15 kV contact discharge).
Designated as part of the CPDVR08 series (SOT-383F package), the CPDVR083V3UA-HF array diode features a flow-through design that simplifies board layout and reduces board space by as much as 70% when compared to four single-line discrete devices.
The chip utilises the 8-pin SOT-383F flat chip package, which measures 2,1 x 1,6 x 0,525 mm. The RoHS-compliant device has gold terminations and is completely tin- and halogen-free. Under normal circumstances, it will present high impedances to protected lines up to 3,3 V. When the line voltage exceeds the trigger voltage of 3,5 V, the diode will activate.
The array diode features a peak pulse power (PPP) value of 40 W and a peak pulse current (IPP) value of 5 A. With an operating temperature range of -55°C to 125°C, it is designed for production and its high-temperature moulding material can cycle through the reflow oven three times at 260°C for 10 to 12 seconds.
For more information visit www.comchiptech.com
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