Alliance Memory has introduced a new high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16 MB in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from clock of 5,4 ns at a 7 ns clock cycle and a fast clock rate of 143 MHz.
The new device is optimised for medical, industrial, automotive and telecom applications requiring high memory bandwidth, and is particularly well suited to high-performance PC applications. It is internally configured as dual banks of 512 K word x 16 bits with a synchronous interface and the SDRAM operates from a single +3,3V (±0,3 V) power supply. It is free of lead and halogen.
The AS4C1M16S provides programmable read or write burst lengths of 1, 2, 4, 8 or full page; with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximise performance.
Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS4C1M16S is the latest in its full line of high-speed SDRAMs which now includes devices with densities of 16 MB, 64 MB, 128 MB and 256 MB.
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