Vishay has extended its TrenchFET Gen III family of P-channel power MOSFETs with a new single 12 V device in the thermally enhanced 2 by 2 mm PowerPAK SC-70 package and a single 30 V device in the 3 by 1,8 mm PowerPAK ChipFET package with a thin 0,8 mm profile.
The 12 V SiA447DJfeatures an on-resistance of 13,5 m at 4,5 V, 19,4 m at 2,5 V, 35 m at 1,8 V and 71 m at 1,5 V. The 30 V Si5429DU has on-resistance of 22 m at 4,5 V and 15 m at 10 V.
The components will be used for battery or load switching in power management applications for portable electronics such as smartphones, tablet PCs and mobile computing devices. In addition to translating into lower conduction losses for reduced power consumption, the MOSFETs’ low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.
The 30 V rating of the Si5429DU makes it well suited to end products with multi-cell Li-ion batteries, while the SiA447DJ will be used when size and lower on-resistance are critical. In addition, the SiA447DJ’s on-resistance ratings down to 1,5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry.
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