DSP, Micros & Memory


Low-power SRAMs

23 October 2013 DSP, Micros & Memory

Renesas Electronics added 12 new product versions to the RMLV0416E, RMLV0414E and RMLV0408E series of low-power SRAM devices. The new memory devices have a density of 4 Mb and utilise a fine fabrication process technology with a circuit line width of 110 nm. They incorporate structural measures to prevent soft errors and latch-up, and achieve low-power operation with a standby current of maximum of 2 μA at 25°C, making them suitable for data storage in battery-backup devices. These features enable the devices to achieve high levels of reliability suitable for applications such as factory automation equipment, measuring devices, equipment employed in smart grids, and transportation systems.



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