Alliance Memory has extended its 64 M and 128 M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a new 2 M x 32 device in the 90-ball, 8 by 13 by 1,2 mm TFBGA package and a 4 M x 32 device in the 86-pin, 400-mil plastic TSOP II package.
The new devices provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom and consumer products requiring high memory bandwidth. For these applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature fast access time from clock down to 5,4 ns and fast clock rates to 166 MHz.
Offering a commercial temperature range of 0°C to 70°C, the chips operate from a single +3,3 V (±0,3 V) power supply and are lead- and halogen-free. They provide programmable read or write burst lengths of 1, 2, 4, 8 or full page, with a burst termination option.
An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximise performance.
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