Power Electronics / Power Management


Super-rugged RF power MOSFETs operate up to 65 V

12 September 2001 Power Electronics / Power Management

Advanced Power Technology has added the ARF462 and ARF464 to its family of super-rugged high voltage RF power MOSFETs. Both devices operate to DC voltages up to 65 V. The ARF462 delivers 150 W of CW output power up to 60 MHz and the ARF464 delivers 100 W of CW output power up to 100 MHz.

High-power RF generators are used extensively in semiconductor manufacturing, CO2 laser, and medical MRI equipment and a wide variety of HF/VHF communications equipment such as broadband linear amplifiers. To specifically address these demanding markets, APT developed a proprietary high-voltage wafer fabrication process for making RF power MOSFETs. This doubles the transistor's available SOA (safe operating area), improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances the ability to reliably operate in a Class AB linear mode. Conventional RF MOSFETs for 50 V operation have maximum device breakdown voltages (BVDSS) of about 125 V providing marginal headroom for reliability in many applications. These new high BVDSS RF MOSFETs allow increased headroom up to 65 V operation.

The ARF462 and ARF464 are available in a common source TO-247 low-cost plastic package in mirror-image A and B configurations that simplify circuit layout of both parallel and push-pull operation. The rated power dissipation for the ARF462 is 250 W and the ARF464 is 180 W.



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