M/A-COM Technology Solutions has put two new high-power MMIC amplifiers on the market for X-band communication and radar applications.
The MAAP-015030 is a two-stage GaAs device covering 8,5 GHz to 11,75 GHz with saturated pulsed output power of 41 dBm, large signal gain of 21 dB and 40% power added efficiency. It can be biased using a direct gate voltage or using an on-chip gate bias circuit, providing an efficient bare die solution for high-power applications.
The MAAP-015035 is a three-stage GaAs pHEMT model that supports 8,5 GHz to 11,5 GHz operation and is capable of achieving saturated pulsed output power of 41 dBm and small signal gain of 36 dB. Its gate terminals can be biased directly using a direct gate voltage or using an on-chip gate bias circuit. This chip provides 40% power added efficiency and offers very high gain which eliminates the need for a driver amplifier in customers’ circuits.
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