High-speed serial Flash chips

DSP, Micros & Memory

25 February 2015 DSP, Micros & Memory

Microchip expanded its 1,8 V Serial Quad I/O (SQI) SuperFlash memory with the new SST26WF080B and SST26WF040B. These devices offer 4 Mb and 8 Mb of memory and boast sector and block erase operations completed in just 18 ms and a full chip erase operation completed in 35 ms.

The SQI interface is a 104 MHz quad I/O serial interface which allows for high data throughput in a low pin-count package. This enables low latency execute-in-place (XIP) capability, allowing programmes to be stored and executed directly from the Flash memory and eliminating the need for code shadowing on a RAM device.

Microchip claims these devices provide faster data throughput than a comparable x16 parallel Flash device without the associated high cost and high pin count of parallel Flash. The SQI interface also offers full command-set backwards compatibility to the traditional Serial Peripheral Interface (SPI) protocol.

Standby current consumption is 10 μA and a deep power-down mode further reduces this to 1,8 μA, while active read current at 104 MHz is 15 mA. Reliability figures include 100-year data retention and device endurance of over 100 000 erase/write cycles.

Enhanced safety features include software write protection of individual blocks for flexible data/code protection and a one-time programmable, 2 KB secure ID area. These features protect against unauthorised access and malicious read, programme and erase intentions. The chips also include a JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table, which contains identifying information about their function and capability in order to simplify software design.

The SST26WF080B/040B are available in 8-contact WSON (6 x 5 mm), 8-lead SOIC (150 mil), 8-contact USON (2 x 3 mm) and 8-ball XFBGA (Z-Scale) packages.

For more information contact Shane Padayachee, Avnet Kopp, +27 (0)11 319 8600, [email protected], www.avnet.co.za

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High-speed serial Flash chips

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