Analogue, Mixed Signal, LSI


GaAs PHEMT switches for RF

24 October 2001 Analogue, Mixed Signal, LSI

Infineon Technologies has introduced three new gallium arsenide (GaAs) PHEMT (pseudomorphic high electron mobility transistor) switches, the CSH210, CSH210R and CSH210P, for present and next-generation multiband mobile phones, WLAN and Bluetooth products. The benefits PHEMT switch technology include very low insertion loss, excellent isolation and high linearity while consuming near-zero control current. They can be biased, using only positive control voltages, and do not require an external reference voltage. The CSH210 (standard logic) and CSH210R (reverse logic) are general-purpose SPDT switches in ultra- miniature SOT363 package (2 x 2 mm). The CSH210 and CSH210R achieve 0,3 dB and 0,4 dB insertion loss at 1 GHz and 2 GHz respectively. Typical isolation is better than 24 dB up to 1 GHz and better than 20 dB up to 2 GHz. Both achieve a P (-1 dB) of 30 dBm when biased with +3 V. The CSH210P is a higher power version of the CSH210.



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