Power Electronics / Power Management


Ultra-wideband RF power GaN transistors

25 November 2015 Power Electronics / Power Management Telecoms, Datacoms, Wireless, IoT

From Freescale Semiconductor came two ultra-wideband RF power gallium nitride (GaN) transistors in new advanced plastic packages. The new OM-270 package, offered in two-lead and eight-lead configurations, extends Freescale’s proprietary OMNI RF plastic packaging technology to the smallest outline yet, and adds compatibility with GaN.

The industry-leading bandwidth of these products allows designers to replace two or even three separate RF power amplifiers with a single RF lineup to reduce system cost. Their ultra-low thermal resistance also enables reductions in the cost of cooling systems, or the ability to run at full CW-rated power to much higher case temperatures.

The MMRF5015N is a 100 W, 50 V, true CW component ideally suited for high-power military and civil communication systems. It boasts a thermal resistance of less than 0,8°C/W and débuted alongside an evaluation fixture which demonstrates 200 – 2500 MHz bandwidth with a minimum of 12 dB gain and 40% efficiency over the entire band.

Ideally suited for lower-power military and civil handheld radio communications devices, the MMRF5011N is a 10 W, 28 V, true CW part demonstrating 200 – 2600 MHz bandwidth in an available applications circuit.

For more information contact EBV Electrolink, +27 (0)21 402 1940, capetown@ebv.com, www.ebv.com



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