Murata Integrated Passive Solutions has launched a new range of silicon capacitors that implement patented technology, enabling the integration of a wide range of capacitor values in silicon, allowing the range to be used in many applications that require high performance and miniaturisation. Demanding applications targeted by the SiCap range include use in space-constrained designs, especially for ultra-broadband, as well as in RF/microwave and high-temperature applications.
The components offer improved stability over temperature, voltage and ageing performance, exceeding that offered by alternative capacitor technologies, making them ideal for demanding applications where stability and reliability are the main parameters. These can include products and systems requiring extremely reliable components, such as in aeronautics, avionics and automotive markets, as well as for medical implants.
Based on a monolithic structure embedded in a mono-crystalline substrate, the high-density silicon capacitors have been developed using a metal-oxide semiconductor (MOS) process and use the third (or height) dimension to substantially increase surface area – and therefore capacitance – without increasing the device’s footprint.
The SiCap range includes low-profile devices that are less than 100 µm thick for decoupling inside critical-space applications such as for IC decoupling or in MOS-based sensors, broadband modules and RFID products. There are also high-temperature types that can handle up to 250°C with high stability; ultra broadband types for signals up to 60 GHz+; and high-reliability medical and automotive grade capacitors for under-the-hood applications up to 200°C.
Other key features of the range include shorter interconnect for lower package parasitics, and compatibility with all packaging or assembly configurations including wire bond, bumping, laminates, leadframes and wafer-level chip-scale packaging.
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