Low volt, high current power MOSFETs in new isolated mounting

30 January 2002 Power Electronics / Power Management

IXYS has introduced three new Trench Power MOSFETs for low voltage/high current applications. The IXUC100N055, IXUC200N055 and IXUC160N075 possess very high current ratings of 100 A, 200 A and 160 A respectively. The IXUC100N055 and the IXUC200N055 are rated at VDS (Drain Source Voltage) equal to 55 V while the IXUC160N075 has a VDS rating of 75 V.

All these devices are housed in a new 'hole-less' package that conforms to the TO-220 outline with an electrically isolated mounting tab. In this ISOPLUS220 housing, the standard copper lead frame has been replaced by Direct-Copper-Bonded (DCB) alumina. The elimination of the screw hole makes room for larger Trench Power MOSFET dice, which can carry higher current than possible using the regular TO-220 package. Benefits are: 2500 V (rms) isolation, lower temperature rise, better power cycling and smaller size. Maximum operating junction temperature rating is 175°C.

The 75 V IXUC160N075 MOSFET features includes a very low RDS(on) of 6,5 mOhm and a QG(on) of 250 nC. Likewise the 55 V IXUC100N055 and IXUC200N055 have RDS(on) of 7,7 and 4 mOhm and QG(on) of 100 nC and 200 nC respectively. All three MOSFETs will find use in high power DC to DC converters, battery back-up UPS Systems, future automobiles with 42 V batteries, telecom systems, motion controls, and DC motor controls etc, where very high frequency switching can be employed with the lowest ever conduction and switching losses.

Avnet Kopp

(011) 444 2333

sales@avnet.co.za

www.avnet.co.za

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