Low volt, high current power MOSFETs in new isolated mounting

30 January 2002 Power Electronics / Power Management

IXYS has introduced three new Trench Power MOSFETs for low voltage/high current applications. The IXUC100N055, IXUC200N055 and IXUC160N075 possess very high current ratings of 100 A, 200 A and 160 A respectively. The IXUC100N055 and the IXUC200N055 are rated at VDS (Drain Source Voltage) equal to 55 V while the IXUC160N075 has a VDS rating of 75 V.

All these devices are housed in a new 'hole-less' package that conforms to the TO-220 outline with an electrically isolated mounting tab. In this ISOPLUS220 housing, the standard copper lead frame has been replaced by Direct-Copper-Bonded (DCB) alumina. The elimination of the screw hole makes room for larger Trench Power MOSFET dice, which can carry higher current than possible using the regular TO-220 package. Benefits are: 2500 V (rms) isolation, lower temperature rise, better power cycling and smaller size. Maximum operating junction temperature rating is 175°C.

The 75 V IXUC160N075 MOSFET features includes a very low RDS(on) of 6,5 mOhm and a QG(on) of 250 nC. Likewise the 55 V IXUC100N055 and IXUC200N055 have RDS(on) of 7,7 and 4 mOhm and QG(on) of 100 nC and 200 nC respectively. All three MOSFETs will find use in high power DC to DC converters, battery back-up UPS Systems, future automobiles with 42 V batteries, telecom systems, motion controls, and DC motor controls etc, where very high frequency switching can be employed with the lowest ever conduction and switching losses.

Avnet Kopp

(011) 444 2333

[email protected]

www.avnet.co.za

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