Silicon Labs has released two new Power over Ethernet (PoE) powered device (PD) families that include all necessary high-voltage discrete components on a single chip. The Si3406x and Si3404 families support IEEE 802.3 at PoE+ power capabilities, flexible power conversion options exceeding 90% efficiency, robust sleep/wake/LED support modes and high EMI immunity.
The rapid expansion of the IoT is boosting demand for PoE+ connectivity in IP cameras, smart lighting luminaires, feature-rich video IP phones, advanced 802.11 wireless access points and smart home appliances. These applications require higher wattage driving increased demand for PD devices that support the PoE+ standard. For example, the latest motor-positioned IP cameras with pan/tilt/zoom and heater elements create heavy loads on power supplies. PoE+ technology brings 30 Watts of power to support these demanding application tasks.
The Si3406x ICs integrate all power management and control functions required for a PoE+ PD application, converting the high voltage supplied over a 10/100/1000BASE-T Ethernet connection to a regulated, low-voltage output supply.
Complementing the Si3406x family, the Si3404 IC offers cost-effective, 802.3 Type 1 compliant support for lower-power 15 W PoE PD applications. The Si3404 includes all interface and control functions required for low-power PD applications in a very small footprint.
The Si3406x ICs integrate diode bridges and a transient surge suppressor, enabling direct connection to an Ethernet RJ-45 connector. The regulator’s switching frequency is tuneable with a simple external resistor value to avoid unwanted harmonics. An integrated synchronous driver can control a secondary side field effect transistor (FET) to improve power conversion efficiency. Connection to a PSE switch is maintained during sleep mode by an automated maintain-power-signature (MPS) feature.
The Si3406x family’s current-mode-controlled switching regulator supports multiple isolated and non-isolated power supply topologies. The regulator is complemented by an integrated power switching FET.
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