1200 V next generation IGBT modules
27 March 2002
Power Electronics / Power Management
IXYS has improved the electrical performance of its present range of 1200 V IGBT six-packs and converter-inverter-brake (CIB) Modules by introducing its third generation of nonpunch-through (NPT) IGBT semiconductor dice. In comparison with its second generation, these planar, highly efficient NPT IGBTs offer the following key advantages for the user:
* Smaller VCE(sat) - reduces conduction loss by 10%;
* Reduced EON/EOFF - lowers switching losses also by 10%
* Low thermal junction-to-case thermal resistance R(th)JC.
These modules are fully pin compatible with the industry standard. The use of this new technology results in a better performance, either in higher current or cooler operation. Similar to IXYS standard modules, these products share features such as: square RBSOA; HiPerFRED diode chips for fast and soft recovery; copper baseplate and internal DCB for high reliability.
Applications for these modules are in AC and DC motor drive applications, 3-phase welding equipment, UPS systems, battery chargers, induction heating and mains connected inverters for alternative power sources such as solar and wind power.
Avnet Kopp
011 444 2333
[email protected]
www.avnet.co.za
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