DSP, Micros & Memory


16 Mb flash 8 Mb SRAM combined memory

17 July 2002 DSP, Micros & Memory

SST has announced a high-performance, low-power combination memory device that integrates 16 Mb of dual-bank Flash memory with 8 Mb of SRAM in BGA package. Previously, designers requiring 8 Mb of SRAM in a combination memory device were limited to solutions paired with 32 Mb of Flash memory. The new SST34HF1681 ComboMemory device allows designers of low-cost portable applications get the ideal amount of SRAM they need without incurring the costs of additional Flash memory. Also, SuperFlash technology has low energy consumption and coupled with an optimum memory configuration makes the SST34HF1681 ideal for feature-rich, cost-sensitive portable devices.

The SST34HF1681 offers fast programming and erase speeds of 14 µs (l,1 s) per Word for programming; 18 ms for sector/block erase and 70 ms for chip erase.



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