MOSFET portfolio takes miniaturisation to new levels
26 March 2003
Power Electronics / Power Management
A new line of N-channel MOSFETs in the TSOP6 package from Philips Semiconductors is based on the company's innovative µTrenchMOS technology. With a footprint of 9,3 mm2 (smaller than the tip of a match), the µTrenchMOS TSOP6 devices will enable the creation of smaller, lighter and more powerful portable products such as PDAs, notebook PCs, and domestic appliances such as electric shavers and toothbrushes.
The µTrenchMOS devices feature very low on-state resistance RDS(on) and are rated at 30, 20 and 12 V (Vds). The lower a MOSFET's RDS(on), the less power is dissipated by the product, increasing battery life. The TSOP6 offers superior thermal and electrical qualities providing benefits such as decreased levels of power dissipation down to 1,4 W in addition to cooler running temperatures.
"As high-performance mobile devices like phones, laptops and PDAs pack in more functionality and processing power, space for key components becomes more confined. Leading designers look for smaller silicon solutions that offer improved power capabilities and comparable performance standards,'' says Ian Moulding, international product marketing manager for Power at Philips Semiconductors.
"The introduction of the µTrenchMOS portfolio marries Philips' established µTrenchMOS technology with its expertise in small package manufacturing and offers designers a simple solution to their power and design requirements.''
µTrenchMOS products can be dropped into a range of applications as replacements for larger existing packages or in completely new designs. Samples of the TSOP6 are now available and further µTrenchMOS product releases in TSSOP8, SC70 and SC88 packages will follow says Philips Semiconductors.
For more information contact Mutronics (Value Added Distributor), 011 608 1460.
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