Dual MOSFET 80% smaller in FlipFET package
26 March 2003
Analogue, Mixed Signal, LSI
International Rectifier's IRF6156, a 20 V dual bi-directional HEXFET power MOSFET in a common drain configuration, is 80% smaller than devices in the TSSOP-8 package, with a profile less than 0,8 mm. Housed in IR's proprietary FlipFET package the small size makes the IRF6156 ideal for Li-ion battery pack safety and protection circuits. The FlipFET package uses no lead frame or mould compound. In essence, the die is the package, and reduces thermal resistance from junction-to-PCB to 35°C/W compared to >60°C/W for SO-8 package devices. In addition, thermal resistance junction-to-ambient is 50°C/W maximum. All of the device's terminals are on a single side of the die, so stray inductance and other device packaging losses are minimised or eliminated.
Avnet Kopp, 011 809 6100
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