A new agreement will see Mouser Electronics distributing ferroelectric random access memory (FRAM) and large-density resistive random access memory (ReRAM) products from Fujitsu Semiconductor Memory Solution.
Fujitsu FRAMs are new-generation non-volatile memories that meet engineers’ needs for higher read/write endurance, faster writing speed and lower power consumption compared to EEPROM. Fujitsu FRAM is available from Mouser in both serial (SPI and I²C) and parallel interfaces and in a wide range of compact, high-density package types. Memory size options are available from 4 Kbits up to 8 Mbits.
Featuring an SPI interface, Fujitsu ReRAM operates across a wide range of power supply voltages from 1,6 V to 3,6 V. The EEPROM-compatible device features very low power consumption of just 0,15 mA in read state and 1,5 mA in write state, which, combined with its 8 Mbit density, makes it ideal for small, battery-operated wearable devices such as hearing aids, smartwatches and smart glasses.
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